Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...
Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...
NEO's IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and ...
Hitachi, Ltd. (NYSE: HIT / TSE: 6501) in cooperation with Elpida Memory, Inc. (TSE: 6665), have proposed a new DRAM(*1) circuit design enabling 0.4-V operation. The proposed array employs a twin cell ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
SK Hynix has unveiled a long-term roadmap for next-generation DRAM technologies, laying out a vision that aims to drive sustainable innovation over the next 30 years as the global semiconductor ...
SK Hynix Inc. (or "the company", www.skHynix.com) announced today that it presented a new DRAM technology roadmap for the next 30 years and the direction for a sustainable innovation at the IEEE VLSI ...
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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per module
NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...
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