The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...

A conceptual diagram of diluted hydrogen annealing of SiO 2 /SiC structure. The background scenery is inside the Class 1 cleanroom located in Graduate School of Engineering, The University of Osaka.

A hydrogen-based two-step annealing process improves SiC MOS device efficiency and reliability, expanding voltage range for electric vehicles and renewable energy systems. SiC power devices offer ...

This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...

In the semiconductor industry, the use of radiation-hardened power MOS devices to avoid latchup is less common than hardening logic and memories to avoid single-event upsets. Going the less-traveled ...

A new technical paper titled “Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices” was published by a researcher at Vanderbilt University, Nashville, Tennessee. The work ...