This application note presents the real Schottky diodes as the best choice for lowest forward voltage drop. This document describes the low, medium and high voltage level applications, as well as ...

Cree Inc. announces a series of packaged diodes that deliver one of the highest blocking voltages available in SiC Schottky technology. Cree Inc. announces a series of packaged diodes that deliver one ...

A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...

Combining efficiency with ruggedness, RIR Power Electronics’ MPS technology enables designers to achieve higher performance without compromising reliability.

CAMARILLO, Calif.--(BUSINESS WIRE)--Semtech Corporation (Nasdaq: SMTC), a leading supplier of high-performance analog and mixed-signal semiconductors and advanced algorithms, announced the ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

MALVERN, Pa., Jan. 25, 2021 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 10 new 650 V silicon carbide (SiC) Schottky diodes. Featuring a merged PIN Schottky (MPS) ...

LEIDEN, Netherlands, April 04, 2017 (GLOBE NEWSWIRE) -- IXYS Corporation (NASDAQ:IXYS), a leader in power semiconductors and IC technologies for energy efficient products used in power conversion and ...

In response to this trend, Infineon Technologies has introduced the CoolSiC Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. The ...

MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 ...