A new technical paper titled “Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx ...
Researchers have developed a new fabrication process for high-speed graphene transistors using a nanowire as the self-aligned gate. This new technique does not produce any appreciable defects in the ...
The devices, which operate on a heterojunction-gated (HG) structure, demonstrate high responsivity and detectivity while maintaining a simplified fabrication process. This approach avoids the ...
At the upcoming IEEE International Electron Devices Meeting (IEDM), Intel is expected to present papers on its efforts to develop gate-all-around transistors. One paper from Intel describes a more ...
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